Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices. (16th September 2019)

• Record Type: Journal Article
• Authors: Baek, Myung-Hyun; Jang, Taejin; Kim, Hyungjin; Park, Jungjin; Kwon, Min-Woo; Hwang, Sungmin; Kim, Suhyeon; Lee, Jeong-Jun; Park, Byung-Gook
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 10(2019)
• Publication Date: 2019-09-16
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab3e2c
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this paper, we investigate the floating body effect (FBE) in fully depleted polysilicon-body ultrathin-body MOSFETs. Generally, the FBE cannot occur in a fully depleted body. However, we demonstrate that an FBE-like phenomenon can be observed in fully depleted polysilicon-body MOSFETs due to the grain boundaries of the polysilicon. To analyze this, devices with various conditions were fabricated and measured. As a result, we may argue that generated holes can be trapped at grain boundaries, which causes an FBE-like phenomenon. Based on this, we expect that thin-polysilicon devices can be utilized for various applications such as 1T-DRAM or synaptic devices.