Cite
HARVARD Citation
Tokuda, H. et al. (2019). Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes. Japanese journal of applied physics. p. . [Online].
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Tokuda, H. et al. (2019). Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes. Japanese journal of applied physics. p. . [Online].