Comparative study of InGaN and InGaAs based dopingless TFET with different gate engineering techniques. (29th August 2019)

• Record Type: Journal Article
• Authors: Sharma, Monika; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula
• Is Part Of: Advances in natural sciences. Volume 10:Number 3(2019)
• Publication Date: 2019-08-29
• Subjects: Charge plasma -- Band-to-band tunnelling -- Sub-threshold Swing (SS) -- Threshold voltage; 2.07 -- 3.02 -- 6.01; Nanotechnology -- Periodicals; Nanoscience -- Periodicals; 620.5
• DOI: 10.1088/2043-6254/ab38b1
• Languages: English
• ISSNs: 2043-6254

Abstract

Abstract: In this paper, we have presented the comparative analysis of InGaN and InGaAs based DL TFETs with different gate engineering methods for lowering the sub-threshold swing and increasing the I ON / I OFF ratio. The 2D simulation study is carried out for comparing the results of conventional DL TFET with three gate engineered structures. InGaAs doped hetero-dielectric hetero-gate DL TFET shows best result of about ~2.217 times increase in the I ON / I OFF, 40.17% decrease in the average sub-threshold swing as compared to their respective DL TFET structure. Similarly, InGaN doped HD-HG DL TFET shows ~8.514 times increase in the I ON / I OFF, 45.83% decrease in the average sub-threshold swing as compared to their respective DL TFET structure. Finally the result shows InGaAs based HD-HG DL TFET as a favourable device for low power and digital applications.