Origins of etch pits in β-Ga2O3(010) single crystals. (21st November 2016)

• Record Type: Journal Article
• Authors: Hanada, Kenji; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Kasu, Makoto
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 12(2016:Dec.)
• Publication Date: 2016-11-21
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.1202BG
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Etch pits of various shapes were observed on etched β-Ga2 O3 (010) single crystals and classified into types A–F according to shape. Type-A etch pits changed in shape in the order of types B, C, and D by etching. Groove-shaped pits observed on as-grown β-Ga2 O3 (010) single crystal surfaces [K. Hanada et al., Jpn. J. Appl. Phys. 55, 030303 (2016) ] were classified into type G. Type-G pits, which were determined to be void defects because of three-dimentional spaces in single crystals, existed before etching and changed to type A after etching. Therefore, after etching, void defects must change in shape as follows: Type G → A → B → C → D. The exposed facets change with etching time. Types-E and -F etch pits were observed to be parallelograms and hexagons, respectively. Types-E and -F etch pits must include dislocations along the [010] direction because they did not change in shape after etching.