Controlled growth of six-point stars MoS2 by chemical vapor deposition and its shape evolution mechanism. (5th September 2017)

• Record Type: Journal Article
• Authors: Zheng, Wei; Qiu, Yunfeng; Feng, Wei; Chen, Jingxin; Yang, Huihui; Wu, Shiwei; Jia, Dechang; Zhou, Yu; Hu, PingAn
• Is Part Of: Nanotechnology. Volume 28:Number 39(2017)
• Publication Date: 2017-09-05
• Subjects: MoS2 -- control growth -- grain boundary -- electrical properties; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa7d27
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Monolayer semiconductors of molybdenum disulfide (MoS2 ) crystals have drawn tremendous attention due to their extraordinary electronic and optical properties. A uniform and high-quality crystalline MoS2 monolayer is greatly needed in fundamental studies and practical applications. Three-point star to six-point star MoS2 nanosheets are readily synthesized in a controlled manner using the chemical vapor deposition method. A possible coalescent model is proposed to study the evolution of the six-point star MoS2 domain. A comparative study of field effect transistors are performed to disclose the negative effect of grain boundaries on the transport properties based on six-point star MoS2 .