Artificial Neural Networks: Dual‐Gated MoS2 Memtransistor Crossbar Array (Adv. Funct. Mater. 45/2020). (4th November 2020)

• Record Type: Journal Article
• Authors: Lee, Hong‐Sub; Sangwan, Vinod K.; Rojas, William A. Gaviria; Bergeron, Hadallia; Jeong, Hye Yun; Yuan, Jiangtan; Su, Katherine; Hersam, Mark C.
• Is Part Of: Advanced functional materials. Volume 30:Number 45(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-11-04
• Subjects: 2D -- artificial neural network -- neuromorphic computing -- sneak current -- synaptic device; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202070297
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number 2003683, Mark C. Hersam and co‐workers present dual‐gated MoS2 memtransistors, which enable a crossbar architecture that solves two long‐standing issues in neuromorphic computing hardware. In particular, one gate suppresses crossbar sneak currents while the second gate allows tuning of the synaptic learning rate. This gate‐tunability provides a dynamic means of achieving linear and symmetric potentiation and depression, thereby facilitating efficient implementation of artificial neural networks.