Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors. Issue 42 (28th October 2020)

• Record Type: Journal Article
• Authors: Li, Dingwei; Zhao, Momo; Liang, Kun; Ren, Huihui; Wu, Quantan; Wang, Hong; Zhu, Bowen
• Is Part Of: Nanoscale. Volume 12:Issue 42(2020)
• Page Start: 21610
• Page End: 21616
• Publication Date: 2020-10-28
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d0nr06177h
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Flexible light weight In2 O3 -based source-gated transistors are achieved with high gain, fast saturation and low power consumption. Abstract : Source-gated transistors (SGTs) with Schottky barriers have emerged as extraordinary candidates for constructing low-power electronics by virtue of device simplicity, high gain, and low operation voltages. In this work, we demonstrate flexible low-power SGTs with solution processed In2 O3 channels and Al2 O3 gate dielectrics on ultrathin polymer substrates, exhibiting light area density (0.56 mg cm −2 ), low subthreshold swing (102 mV dec −1 ), low operation voltage (<2 V), fast saturation behaviors (0.2 V), and low power consumption (46.3 μW cm −2 ). These achievements pave the way for employing the unconventional SGTs in wearable applications where low-power dissipation and high mechanical flexibility are essential.