Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics (Small 42/2020). Issue 42 (22nd October 2020)

• Record Type: Journal Article
• Authors: Tang, Jian; Wei, Zheng; Wang, Qinqin; Wang, Yu; Han, Bo; Li, Xiaomei; Huang, Biying; Liao, Mengzhou; Liu, Jieying; Li, Na; Zhao, Yanchong; Shen, Cheng; Guo, Yutuo; Bai, Xuedong; Gao, Peng; Yang, Wei; Chen, Lan; Wu, Kehui; Yang, Rong; Shi, Dongxia; Zhang, Guangyu
• Is Part Of: Small. Volume 16:Issue 42(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-10-22
• Subjects: 2D electronics -- bandgap engineering -- MoS2 -- substitutional doping; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202070229
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : In article number 2004276, Rong Yang, Guangyu Zhang, and co‐workers develop an in situ oxygen substitutional doping in MoS2 monolayers by one step chemical vapor deposition process and lateral heterostructures with controlled doping concentrations are reliably fabricated. The bandgap tunability (from 2.25 to 1.75 eV) and n‐doping electronic properties are realized. This nondestructive oxygen doping technique holds great promise on future electronics based on 2D semiconductors.