Toxic-free surface level sulphur doped 1D Ti-Ox-Sy nanorods for superstrate heterojunction CZTS thin-film solar cells. (January 2021)

• Record Type: Journal Article
• Authors: Varadharajaperumal, S.; Alagarasan, D.; Sripan, C.; Ganesan, R.; Satyanarayan, M.N.; Hegde, Gopalkrishna
• Is Part Of: Materials research bulletin. Volume 133(2021)
• Publication Date: 2021-01
• Subjects: 1D-TiO2 -- Bandgap -- Thin-film -- Solar cells -- Hydrothermal technique; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2020.111081
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical Abstract: Highlights: Surface level sulphur atoms doped 1D-TiO2 nanorods (S-TNRs) were fabricated via toxic-free novel three-step processes. The lateral doping concentration was determined by cross-sectional FESEM with EDS and depth profiling XPS analysis. Time dependent stability of 350 °C annealed S-TNRs device was verified by I-V characteristics. Abstract: Surface level sulphur (S) doped TiO2 nanorods (S-TNRs) were fabricated via toxic-free novel three-step processes such as low-temperature hydrothermal method followed by thermal evaporation (S layer) and post-annealing (350 °C, 450 °C and 550 °C) techniques. Present work focuses on the comprehensive studies of surface level doping, structure, morphology and compositional properties of different temperature annealed S-TNRs for CZTS thin-film (Au/CZTS/S-TNRs/TNRs/FTO) solar cells. The oxidation states of incorporated S atoms in the TiO2 matrix were identified from X-ray photoelector spectroscopy (XPS) analysis. A reduction in bandgap for 350 °C annealed S-TNRs film was observed from UV-Vis spectroscopy. The electrical characteristics showed the fabricated solar cells strongly depend on the S-TNRs annealing temperature. Proposed technique would be useful in effective and controlled (surface level) doping of S atoms into any desired nanostructured metal oxides for optoelectronic applications and, further useful in fabricating cadmium (Cd) free buffer layer in chalcogenide solar cells.