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HARVARD Citation
Saadaoui, S. et al. (2020). Effects of current transportation and deep traps on leakage current and capacitance hysteresis of AlGaN/GaN HEMT. Materials science in semiconductor processing. p. . [Online].
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Saadaoui, S. et al. (2020). Effects of current transportation and deep traps on leakage current and capacitance hysteresis of AlGaN/GaN HEMT. Materials science in semiconductor processing. p. . [Online].