Structural and defects induced phenomena in γ-rays irradiated 6H-SiC. (October 2016)

• Record Type: Journal Article
• Authors: Sibuyi, P.; Ngom, B.D.; Kotsedi, L.; Izerrouken, M.; Madjoe, R.; Maaza,
• Is Part Of: Radiation physics and chemistry. Volume 127(2016:Oct.)
• Page Start: 169
• Page End: 176
• Publication Date: 2016-10
• Subjects: SiC -- γ-Rays -- Defects -- Nuclear materials -- Radiations; Radiation chemistry -- Periodicals; Radiometry -- Periodicals; Radiation -- Periodicals; Chimie sous rayonnement -- Périodiques; 539.2
• DOI: 10.1016/j.radphyschem.2016.06.018
• Languages: English
• ISSNs: 0969-806X

Abstract

Abstract: Damages and/or defects induced by γ-rays irradiation on 6H-SiC single crystals in channeled configuration towards 〈006〉/〈0012〉 crystallographic directions are reported in the range of 0–1200 kGy. Atomic force microscopy, X-rays diffraction, Raman and photoluminescence investigations were used to obtain a comprehensive set of informations on the nature and population distribution of the induced defects. Primarily, there was no carbon clusterization upon γ-rays irradiation and hence no formation of others SiC polytypes. In contrast, the γ-rays irradiation has induced an increase of the surface roughness at higher doses, which indicates a structural degradation. Larger doses induced an emergence of deeper shallow traps at energies greater than 350 meV below the bandgap. Highlights: No formation of others SiC polytypes. The gamma rays irradiation has induced a slight surface amorphization. A re-crystallization at lower and higher doses is noticed. Larger doses induced a substantial internal stress.