Thermal induced structural evolution and performance of Cu2ZnSnSe4 thin films prepared by a simple route of ion-beam sputtering deposition. (15th October 2016)

• Record Type: Journal Article
• Authors: Liang, Guang-Xing; Fan, Ping; Hu, Ju-Guang; Zhao, Jun; Zhang, Xiang-Hua; Luo, Zhong-Kuan; Ma, Hong-Li; Luo, Jing-Ting; Zheng, Zhuang-Hao; Zhang, Dong-Ping
• Is Part Of: Solar energy. Volume 136(2016)
• Page Start: 650
• Page End: 658
• Publication Date: 2016-10-15
• Subjects: Cu2ZnSnSe4 -- Ion-beam sputtering -- Photovoltaic -- Chalcogenide; Solar energy -- Periodicals; Solar engines -- Periodicals; 621.47
• DOI: 10.1016/j.solener.2016.07.047
• Languages: English
• ISSNs: 0038-092X

Abstract

Graphical abstract: Highlights: A simple method of fabricating CZTSe thin film by ion-beam sputtering without post-selenization was proposed. The optimized CZTSe films were obtained at relatively low annealing temperature at 400 °C. The prototype devices of distinct photovoltaic affect and efficiency of about 4.67%. Abstract: In this work, a simple method for fabricating Cu2 ZnSnSe4 (CZTSe) thin film by ion-beam sputtering without post-selenization is proposed. The influence of annealing temperature on the composition, the micro-structure, the morphology, the electrical and optical properties of CZTSe thin films has been established. The relatively low annealing temperature of 400 °C is considered as very positive for obtaining the optimized Cu-poor and Zn-rich CZTSe films with pure CZTSe phase, high crystallinity, P-type conduction and ideal optical band-gap. These interesting features have been used in the prototype photovoltaic devices with a conversion efficiency of 4.67%. These are the first results concerning the use of ion-beam sputtering CZTSe films for photovoltaic application and further improvement of device performance is expected.