An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices. (2001)

• Record Type: Journal Article
• Authors: Amhouche, Y.; El Abbassi, A.; Raïs, K.; Rmaily, R.
• Is Part Of: Active and passive electronic components. Volume 24:Number 3(2001)
• Page Start: 135
• Page End: 140
• Publication Date: 2001
• Subjects: Drain saturation voltage -- Critical field -- Substrate current -- Effective mobility -- Saturation velocity; Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1155/2001/49537
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : In this letter, an accurate method for extracting the critical field E c in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage V d sat ( V g ) continuously. The results obtained by this technique have shown better agreement with measurements data and have allow in the same time to determine the validity domain of Sodini's law [1].