Cite
HARVARD Citation
Aichinger, T. et al. (2018). Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectronics and reliability. pp. 68-78. [Online].
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Aichinger, T. et al. (2018). Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectronics and reliability. pp. 68-78. [Online].