Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale. (23rd November 2015)

• Record Type: Journal Article
• Authors: Zhuang, Zhe; Guo, Xu; Liu, Bin; Hu, Fengrui; Dai, Jiangping; Zhang, Yun; Li, Yi; Tao, Tao; Zhi, Ting; Xie, Zili; Ge, Haixiong; Wang, Xiaoyong; Xiao, Min; Wang, Tao; Shi, Yi; Zheng, Youdou; Zhang, Rong
• Is Part Of: Nanotechnology. Volume 27:Number 1(2016)
• Publication Date: 2015-11-23
• Subjects: excitonic recombination -- light extraction -- InGaN/GaN elliptic nanorod -- nanoimprint lithography; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/1/015301
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: A series of highly ordered c -plane InGaN/GaN elliptic nanorod (NR) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The photoluminescence (PL) integral intensities of NR samples show a remarkable enhancement by a factor of up to two orders of magnitude compared with their corresponding as-grown samples at room temperature. The radiative recombination in NR samples is found to be greatly enhanced due to not only the suppressed non-radiative recombination but also the strain relaxation and optical waveguide effects. It is demonstrated that elliptic NR arrays improve the light extraction greatly and have polarized emission, both of which possibly result from the broken structure symmetry. Green NR light-emitting diodes have been finally realized, with good current–voltage performance and uniform luminescence.