Effect of plasma carrier gas on the moisture barrier properties of plasma-enhanced chemical vapor deposited (PECVD) polyorganosiloxane thin film. (2nd July 2020)

• Record Type: Journal Article
• Authors: Hwang, Jo Eun; Kim, Sung Hee; Choi, Myong Soo; Cho, Sung Min; Lee, Jun Young
• Is Part Of: Molecular crystals and liquid crystals. Volume 705(2020)
• Page Start: 141
• Page End: 149
• Publication Date: 2020-07-02
• Subjects: Hexamethyldisiloxane -- plasma carrier gas -- plasma-enhanced chemical vapor deposition -- polyorganosiloxane thin film -- water vapor transmission rate; Molecular crystals -- Periodicals; Liquid crystals -- Periodicals; Liquid crystals; Molecular crystals; Periodicals; 548
• DOI: 10.1080/15421406.2020.1743431
• Languages: English
• ISSNs: 1542-1406

Abstract

Abstract: A polyorganosiloxane thin film was deposited on an optically transparent poly(ethylene 2, 6-naphthalate) (PEN) film using plasma-enhanced chemical vapor deposition (PECVD) at room temperature to improve the moisture barrier property of the PEN film. In the PECVD process, hexamethyldisiloxane (HMDSO) was used as the monomer. Argon or oxygen and their mixture gases were used as the plasma carrier gas. Poly(HMDSO) thin film was successfully deposited through plasma-induced radical polymerization reaction on the surface of PEN film. It was observed that the mixture ratio of argon-oxygen carrier gas significantly affected the surface and the moisture barrier properties of the resulting poly(HMDSO) film. Chemical structures of the poly(HMDSO) were confirmed using FT-IR analysis. Surface properties of the poly(HMDSO) thin film were investigated by water contact angle measurement and atomic force microscopy (AFM). Water vapor transmission rate (WVTR) value was obtained by an electrical calcium test (Ca test) at 85 °C and 85% relative humidity condition. It was confirmed that the poly(HMDSO) thin film exhibited excellent water vapor barrier capability. WVTR value of the PEN film coated with poly(HMDSO) deposited with a mixture of argon and oxygen (Ar: O2 = 2: 8) was 5.09 g/m 2 -day, which is much lower than 18.4 g/m 2 -day of a bare PEN film.