Cite
HARVARD Citation
Horri, A. et al. (2017). Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions. Physica status solidi. 214 (10), p. n/a. [Online].
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Horri, A. et al. (2017). Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions. Physica status solidi. 214 (10), p. n/a. [Online].