Cite
HARVARD Citation
Srivastava, A. et al. (2016). Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor. Solid-state electronics. pp. 96-103. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Srivastava, A. et al. (2016). Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor. Solid-state electronics. pp. 96-103. [Online].