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HARVARD Citation
Ma, X. et al. (2016). A compact model of the reverse gate-leakage current in GaN-based HEMTs. Solid-state electronics. pp. 10-13. [Online].
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Ma, X. et al. (2016). A compact model of the reverse gate-leakage current in GaN-based HEMTs. Solid-state electronics. pp. 10-13. [Online].