Stimulated emission and lasing in Cu(In, Ga)Se2 thin films. (1st February 2016)

• Record Type: Journal Article
• Authors: Svitsiankou, I E; Pavlovskii, V N; Lutsenko, E V; Yablonskii, G P; Mudryi, A V; Zhivulko, V D; Yakushev, M V; Martin, R W
• Is Part Of: Journal of physics. Volume 49:Number 9(2016)
• Publication Date: 2016-02-01
• Subjects: Cu(In, Ga)Se2 -- stimulated emission -- lasing -- gain -- threshold -- photoluminescence; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/9/095106
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Stimulated emission and lasing in Cu(In, Ga)Se2 thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N2 laser with power densities in the range from 2 to 100 kW cm −2 . Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm −2 . A gain value of 94 cm −1 has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I thr ~ 50 kW cm −2 .