Incorporation of Mg into thick free-standing HVPE GaN. Issue 2 (2016)

• Record Type: Journal Article
• Authors: Zvanut, M.E.; Dashdorj, J.; Freitas, J.A.; Glaser, E.R.; Leach, J.H.; Udwary, K.
• Is Part Of: MRS advances. Volume 1:Issue 2(2016)
• Page Start: 169
• Page End: 174
• Publication Date: 2016
• Subjects: defects, -- III-V, -- Mg; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.102
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: Mg, the only effective p -type dopant for nitrides, is well-studied in thin films due to the important role the impurity plays in light emitting diodes and high power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here we evaluate the material quality and point defects in GaN grown by hydride vapor phase epitaxy (HVPE) using metallic Mg as the doping source. The crystal quality is typical of commercially grown HVPE substrates, and the photoluminescence measurements reveal distinctively sharp excitonic and shallow-donor shallow-acceptor features. Secondary ion mass spectroscopy indicates total Mg concentrations between 7x10 16 and 6x10 18 cm -3 in the four separate samples studied but, more significantly, photoluminescence and electron paramagnetic resonance spectroscopy show that the Mg is incorporated as a shallow acceptor.