Potential for neutron and proton transmutation doping of GaN and Ga2O3. Issue 1 (28th February 2020)

• Record Type: Journal Article
• Authors: Logan, Julie V.; Frantz, Elias B.; Casias, Lilian K.; Short, Michael P.; Morath, Christian P.; Webster, Preston T.
• Is Part Of: Materials advances. Volume 1:Issue 1(2020)
• Page Start: 45
• Page End: 53
• Publication Date: 2020-02-28
• Subjects: 620.11
• DOI: 10.1039/d0ma00017e
• Languages: English
• ISSNs: 2633-5409

Abstract

Abstract : High energy proton irradiation produces long-lived p-type doping in GaN and Ga2 O3 . Abstract : As the potential applications of GaN and Ga2 O3 are limited by the inadequacy of conventional doping techniques, specifically when uniform selective area p-type doping is required, the potential for transmutation doping of these materials is analyzed. All transmuted element concentrations are reported as a function of time for several common proton and neutron radiation sources, showing that previously published results considered a small subset of the dopants produced. A 40 MeV proton accelerator is identified as the most effective transmutation doping source considered, with a 2.25 × 10 17 protons per cm 2 fluence yielding net concentrations of uncompensated p-type dopants of 7.7 × 10 15 and 8.1 × 10 15 cm −3 for GaN and Ga2 O3, respectively. Furthermore, it is shown that high energy proton accelerator spectra are capable of producing dopants required for magnetic and neutron detection applications, although not of the concentrations required for current applications using available irradiation methods.