Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted perovskite solar cells. Issue 40 (7th October 2020)

• Record Type: Journal Article
• Authors: Elseman, Ahmed Mourtada; Luo, Lie; Song, Qun Liang
• Is Part Of: Dalton transactions. Volume 49:Issue 40(2020)
• Page Start: 14243
• Page End: 14250
• Publication Date: 2020-10-07
• Subjects: Chemistry, Inorganic -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Chemistry, Inorganic -- Periodicals; 546.05
• DOI: 10.1039/d0dt03029e
• Languages: English
• ISSNs: 1477-9226

Abstract

Abstract : We present a novel self-doping method to obtain trivalent nickel oxide (Ni2 O3 ) as an HTL, and its excellent optical transmittance and hole extraction efficiencies lead to a PCE of 17.89% and high FF of 82.66%. Abstract : Nickel oxide (NiO x ) as a hole transport layer has been vastly investigated in perovskite solar cells (PSCs) due to the nature of p-type doping, highly transparent materials, and deep-lying valence bands. In this paper, a new phase based on trivalent Ni2 O3 is synthesized by low temperature solution processing of mixed nickel (acetate/nitrate). In comparison, high-temperature solution-processing of divalent NiO x resulted in novel Ni2 O3 thin films that display better consistency and superior energy compatibility with perovskite thin films. In this respect, high-performance perovskite solar cells are efficiently produced utilizing MA0.85 FA0.15 PbI0.9 Cl0.1 perovskite with a power conversion efficiency (PCE) reaching 17.89% and negligible hysteresis comparable to 14.37% for NiO x . The Ni2 O3 -based PSCs reported the highest fill factor (FF) (82.66%) compared to that of divalent NiO x (67.53%). Different characterization studies and analyses supply proof of improved film quality, increased transport and extraction of charges, and suppressed charge recombination. Meanwhile, the device exhibits low hysteresis compared to sol–gel-processed NiO x .