Morphology-controlled MoS2 by low-temperature atomic layer deposition. Issue 39 (7th October 2020)

• Record Type: Journal Article
• Authors: Shen, Chengxu; Raza, Muhammad Hamid; Amsalem, Patrick; Schultz, Thorsten; Koch, Norbert; Pinna, Nicola
• Is Part Of: Nanoscale. Volume 12:Issue 39(2020)
• Page Start: 20404
• Page End: 20412
• Publication Date: 2020-10-07
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d0nr03863f
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Morphologies-controlled MoS2 deposited by low temperature ALD exhibit tunable optical properties. Abstract : Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoS2 are materials for multifarious applications such as sensing, catalysis, and energy storage. Due to their peculiar charge-transport properties, it is always desired to control their morphologies from vertical nanostructures to horizontal basal-plane oriented smooth layers. In this work, we established a low-temperature ALD process for MoS2 deposition using bis( t -butylimino)bis(dimethylamino)molybdenum(vi ) and H2 S precursors. The ALD reaction parameters, including reaction temperature and precursor pulse times, are systematically investigated and optimized. Polycrystalline MoS2 is conformally deposited on carbon nanotubes, Si-wafers, and glass substrates. Moreover, the morphologies of the deposited MoS2 films are tuned from smooth film to vertically grown flakes, and to nano-dots, by controlling the reaction parameters/conditions. It is noticed that our MoS2 nanostructures showed morphology-dependent optical and electrocatalytic properties, allowing us to choose the required morphology for a targeted application.