Cite
HARVARD Citation
Mohta, N. et al. (2020). Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics. Physica status solidi. 217 (19), p. n/a. [Online].
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Mohta, N. et al. (2020). Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics. Physica status solidi. 217 (19), p. n/a. [Online].