Unusual phase-pure zinc blende and highly-crystalline As-rich InAs1−xSbx nanowires for high-mobility transistors. Issue 38 (15th July 2020)

• Record Type: Journal Article
• Authors: Yip, SenPo; Li, Dapan; Li, Fangzhou; Wang, Wei; Kang, Xiaolin; Meng, You; Zhang, Heng; Lai, Zhengxun; Wang, Fei; Ho, Johnny C.
• Is Part Of: Journal of materials chemistry. Volume 8:Issue 38(2020)
• Page Start: 13189
• Page End: 13196
• Publication Date: 2020-07-15
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d0tc02715d
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Unusual phase-pure zinc blende and highly-crystalline As-rich InAs1− x Sb x nanowires with x < 0.2 are successfully achieved for the fabrication of high-mobility transistors. Abstract : Due to the excellent electrical and optical properties, small bandgap III–V nanowire (NW) materials hold great promise for future electronics and optoelectronics. In particular, InAs1− x Sb x, the ternary alloy of InAs and InSb, is one of the most studied III–V nanomaterial systems; however, the As-rich InAs1− x Sb x NWs are usually obtained with significant crystal phase mixing and high density of planar defects, limiting their electrical transport characteristics. In this work, unusual phase-pure zinc blende and highly-crystalline As-rich InAs1− x Sb x NWs with x < 0.2 are successfully achieved using solid-source chemical vapor deposition, and this excellent phase-purity and crystallinity has not been reported elsewhere. By simply controlling the precursor powder mixing ratio between InAs and InSb, the morphology and composition of NWs can be controlled reliably. When these InAs1− x Sb x NWs are fabricated into field-effect transistors, they exhibit a superior device performance, especially a high electron mobility. Specifically, the average peak mobility of the InAs0.948 Sb0.052 NW device can be improved up to 3160 cm 2 V −1 s −1, which is substantially better than that of the pure InAs NW counterparts (2030 cm 2 V −1 s −1 ). This mobility enhancement can be attributed to the Sb-alloyed-induced electron effective mass reduction. Also, there exists a surface charge accumulation layer on the NWs as confirmed by the decrease of device transconductance measured under vacuum, indicating future possibilities to manipulate the NW surface for enhanced functionality. All these results evidently indicate the potential of these phase-pure zinc blende As-rich InAs1− x Sb x NWs for high-mobility devices.