Influence of Cu doping on the local electronic and magnetic properties of ZnO nanostructures. Issue 10 (28th August 2020)

• Record Type: Journal Article
• Authors: Bhardwaj, Richa; Bharti, Amardeep; Singh, Jitendra P.; Chae, Keun H.; Goyal, Navdeep
• Is Part Of: Nanoscale advances. Volume 2:Issue 10(2020)
• Page Start: 4450
• Page End: 4463
• Publication Date: 2020-08-28
• Subjects: 620.5
• DOI: 10.1039/d0na00499e
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : Cu doping in ZnO modifies the electronic structure and the hybridization between Cu and O orbitals results in RTFM due to formation of BMPs. Abstract : In this paper, we report the existence of defect induced intrinsic room-temperature ferromagnetism (RTFM) in Cu doped ZnO synthesized via a facile sol–gel route. The wurtzite crystal structure of ZnO remained intact up to certain Cu doping concentrations under the present synthesis environment as confirmed by the Rietveld refined X-ray diffraction pattern with the average crystallite size between 35 and 50 nm. Field emission scanning electron microscopy reveals the formation of bullet-like morphologies for pure and Cu doped ZnO. Diffuse reflectance UV-vis shows a decrease in the energy band gap of ZnO on Cu doping. Further, these ZnO samples exhibit strong visible photoluminescence in the region of 500–700 nm associated with defects/vacancies. Near-edge X-ray absorption fine-structure measurements at Zn, Cu L3, 2 - and O K-edges ruled out the existence of metallic Cu clusters in the synthesized samples (up to 2% doping concentration) supporting the XRD results and providing the evidence of oxygen vacancy mediated ferromagnetism in Cu : ZnO systems. The observed RTFM in Cu doped ZnO nanostructures can be explained by polaronic percolation of bound magnetic polarons formed by oxygen vacancies. Further, extended X-ray absorption fine-structure data at Zn and Cu K-edges provide the local electronic structure information around the absorbing (Zn) atom. The above findings for ZnO nanostructures unwind the cause of magnetism and constitute a significant lift towards realizing spin-related devices and optoelectronic applications.