Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal. (5th October 2020)

• Record Type: Journal Article
• Authors: Hoshi, Kazuhisa; Kimata, Motoi; Goto, Yosuke; Miura, Akira; Moriyoshi, Chikako; Kuroiwa, Yoshihiro; Nagao, Masanori; Mizuguchi, Yoshikazu
• Is Part Of: Journal of physics communications. Volume 4:Number 9(2020)
• Publication Date: 2020-10-05
• Subjects: BiCh2-based superconductor -- magnetoresistance -- nematic superconductivity -- carrier concentration; Physics -- Periodicals; 530.05
• DOI: 10.1088/2399-6528/abbb58
• Languages: English
• ISSNs: 2399-6528

Abstract

Abstract: Recently, two-fold symmetric in-plane anisotropy of the superconducting properties have been observed in a single crystal of BiCh2 -based (Ch: S, Se) layered superconductor LaO0.5 F0.5 BiSSe having a tetragonal (four-fold-symmetric) in-plane structure; the phenomena are very similar to those observed in nematic superconductors. To explore the origin of the two-fold symmetric anisotropy in the BiCh2 -based system, we have investigated the electron-doping dependence on the anisotropy by examining the in-plane anisotropy of the magnetoresistance in the superconducting states for a single crystal of LaO0.9 F0.1 BiSSe under high magnetic fields up to 15 T. We observed a two-fold symmetry of in-plane anisotropy of magnetoresistance for LaO0.9 F0.1 BiSSe. The results obtained for LaO0.9 F0.1 BiSSe are quite similar to those observed for LaO0.5 F0.5 BiSSe, which has a higher electron doping concentration than LaO0.9 F0.1 BiSSe. Our present finding suggests that the emergence of the in-plane symmetry breaking in the superconducting state is robust to the carrier concentration in the series of LaO1− x F x BiSSe.