A physics-based compact model for MoS2 field-effect transistors considering the band-tail effect and contact resistance. (5th October 2020)

• Record Type: Journal Article
• Authors: Liu, Yuan; Zeng, Jiawei; Zhu, Zeqi; Dong, Xiao; Deng, Wanling
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 10(2020)
• Publication Date: 2020-10-05
• Subjects: semiconductor devices modeling -- semiconductor devices -- MoS2 FETs modeling; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abb7e1
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this paper, we present a compact surface-potential-based drain current model in molybdenum disulfide (MoS2 ) field-effect transistors (FETs). Considering variable range hopping (VRH) transport via band-tail states in MoS2 transistors, an explicit solution for surface potential has been derived and it provides a good description over different regions of operation by comparisons with numerical data. Based on the charge-sheet model (CSM), which applies to drift-diffusion transport, the current expression including contact resistance and velocity saturation effect is developed. Furthermore, the presented model is validated and shows a good agreement with the experimental data for MoS2 FETs.