Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption. (1st January 2021)

• Record Type: Journal Article
• Authors: Jin, Lei; Zhao, Kun; Xu, Shihai; Qin, Zuoyan; Cheng, Hongjuan; Zhang, Li; Qi, Haitao; Li, Jing; Zheng, Ruisheng; Wu, Honglei
• Is Part Of: Scripta materialia. Number 190(2021)
• Page Start: 91
• Page End: 96
• Publication Date: 2021-01-01
• Subjects: Annealing -- Infrared (IR) spectroscopy -- Semiconductor -- Point defects -- Density functional theory; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2020.08.049
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: The 4.7 eV absorption band of colorless AlN crystal with the carbon concentration level of 10 7 cm −3 is investigated. An analysis of the absorption characteristics of the annealed AlN crystal indicates that the native defect is the origin of 4.7 eV absorption band and gives rise to an infrared absorption band at 2850 cm −1 . The theory calculations predict two absorption bands at 4.65 eV and 0.35 eV of nitrogen vacancy, and the defect explains the increased and decreased intensity of infrared absorption band at 2850 cm −1 as well as a similar increased-decreased ultraviolet absorption band at 4.7 eV. Graphical abstract: Image, graphical abstract