Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field. (October 2020)

• Record Type: Journal Article
• Authors: Grigelionis, I.; Diakonova, N.; Knap, W.; Teppe, F.; Prystawko, P.; Kašalynas, I.
• Is Part Of: Solid state communications. Volume 320(2020)
• Publication Date: 2020-10
• Subjects: AlGaN/GaN heterostructure terahertz emission impurities; Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2020.114019
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: The electrically excited impurity emission from AlGaN/GaN high electron mobility transistor (HEMT) structures in external magnetic field varying from 1.2 T to 1.5 T was investigated in this work at temperature of 4.2 K. We have observed the sharp emission line at (263 ± 1) cm −1 with FWHM of (5.8 ± 0.8) cm −1, which we have attributed to radiative electronic transitions in residual oxygen impurity atoms. The blueshift of resonant transition frequency due to presence of external magnetic field was observed. The width of the peak was found to be defined mainly by the thermal broadening at 4.2 K. Highlights: Terahertz electroluminescence from AlGaN/GaN heterostructures. Emission was caused by the radiative electron transitions in oxygen impurity. External magnetic field increases impurity-related emission frequency. The width of emision peak is defined by the thermal broadening.