Cite
HARVARD Citation
Sapienza, S. et al. (2020). Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs. Microelectronics and reliability. p. . [Online].
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Sapienza, S. et al. (2020). Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs. Microelectronics and reliability. p. . [Online].