62‐1: Invited Paper: Highly Stable Self‐Aligned Coplanar InGaZnO Thin‐Film Transistors and Investigation on Effective Channel Length†. Issue 1 (29th May 2019)

• Record Type: Journal Article
• Authors: Kim, Jung Bae; Lim, Rodney; Tsai, Yun-chu (Pipi); Wang, Jiarui; Zhao, Lai; Choi, Soo Young; Bender, Marcus; Yim, Dong Kil
• Is Part Of: Digest of technical papers. Volume 50:Issue 1(2019)
• Page Start: 874
• Page End: 877
• Publication Date: 2019-05-29
• Subjects: Top-gate TFTs -- indium gallium zinc oxide (IGZO) -- short channel length -- oxygen vacancy -- hydrogen diffusion -- PBTS -- NBTS; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13061
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Highly stable top‐gate InGaZnO (IGZO) thin‐film transistors (TFTs) with excellent threshold voltage (Vth) uniformity are developed by optimizing gate insulator film properties and controlling oxygen/hydrogen diffusion into IGZO channel. The TFTs do not show notable negative Vth shift and Vth non‐uniformity from channel length 10 µm down to 3 µm.