Design and analysis of INDEP FinFET SRAM cell at 7‐nm technology. (13th February 2020)

• Record Type: Journal Article
• Authors: Mushtaq, Umayia; Sharma, Vijay Kumar
• Other Names: De Gersem Herbert guestEditor.; Kurz Stefan guestEditor.; Schöps Sebastian guestEditor.; Geuzaine Christophe guestEditor.
• Is Part Of: International journal of numerical modelling. Volume 33:Number 5(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-13
• Subjects: ASAP7 -- CMOS -- FinFET -- INDEP -- SNM -- SRAM; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2730
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: The reduction in size of metal oxide semiconductor (MOS) devices results in increase in leakage power dissipation, which occurs due to the short‐channel effects in subthreshold region. Now a day's power dissipation is one of the crucial issues that the modern electronic industry is facing. Fin‐type field‐effect transistor (FinFET) can be proven as a best substitute to reduce leakage power dissipation in logic circuits. Degradation of performance with process variations is of major concern and needs to design FinFET circuits with minimum leakage power dissipation. In this paper, static random‐access memory (SRAM) cell is designed using low power shorted‐gate (SG) FinFETs at 7‐nm technology to minimize leakage power dissipation besides improving other performance parameters like static noise margins (SNMs) and power delay product (PDP) as well. The various parameters are analyzed using butterfly and N‐curve methods. The ASAP7 PDK is used to design SRAM cells using Cadence Virtuoso tool. The simulated results show that FinFET input‐dependent (INDEP) technique reduces the leakage power dissipation by 32.08% and 13.50%, respectively, in read and write conditions of FinFET SRAM cell. The Monte‐Carlo simulation results show the reduction in average power using INDEP approach at ±10% process, voltage and temperature (PVT) variations under 3σ Gaussian distribution of FinFET SRAM cell.