Effect of access resistance on the experimentally measured temperature–carrier mobility dependence in highly-crystalline DNTT-based transistors. Issue 6 (11th August 2020)

• Record Type: Journal Article
• Authors: Wang, Qijing; Jiang, Sai; Shi, Yi; Li, Yun
• Is Part Of: Materials advances. Volume 1:Issue 6(2020)
• Page Start: 1799
• Page End: 1804
• Publication Date: 2020-08-11
• Subjects: 620.11
• DOI: 10.1039/d0ma00530d
• Languages: English
• ISSNs: 2633-5409

Abstract

Abstract : The carrier mobility–temperature dependence obtained from DNTT OFETs can be tuned by the access resistance and the molecular packing in bulk regime. Abstract : Carrier mobility extraction is easily influenced by contact resistance, especially in transistors with a high carrier mobility and a short channel length, which would obscure the investigation into charge transport in organic field-effect transistors (OFETs). Here, we perfunctorily observe a positive carrier mobility–temperature relationship (∂ μ /∂ T > 0) and a temperature-independent carrier mobility (∂ μ /∂ T = 0) in OFETs based on less- and highly-crystalline DNTT bulk films, respectively, while their room-temperature carrier mobilities are almost identical. The difference in the temperature–carrier mobility dependence is attributed to the influence of access resistance while the active channels at the semiconductor/dielectric interface were deposited by the same process of different evaporation rates, which leads to different contact resistances tuned by the DNTT molecular packing in the c -axis. Therefore, it will be beneficial for investigating the charge transport of organic semiconductors by eliminating the influence of access resistance in staggered OFETs.