Cite
HARVARD Citation
Dassi, M. et al. (2020). A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications. Semiconductor science and technology. p. . [Online].
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Dassi, M. et al. (2020). A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications. Semiconductor science and technology. p. . [Online].