Cite
HARVARD Citation
Ohta, H. et al. (2020). Impact of threading dislocations in GaN p–n diodes on forward I–V characteristics. Japanese journal of applied physics. p. . [Online].
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Ohta, H. et al. (2020). Impact of threading dislocations in GaN p–n diodes on forward I–V characteristics. Japanese journal of applied physics. p. . [Online].