48.2: New Formation of Multi‐layered n+ Silicon Films Using Four‐mask process Architecture for Image Sticking Improvement in 32‐inch TV Product. (4th October 2019)

• Record Type: Journal Article
• Authors: Yang, Feng-yun; Cho, An-Thung; Hsu, James; Liu, Zhen; Liu, Kai-jun; Mo, Qiong-hua; Chen, Wade; Lu, York
• Is Part Of: Digest of technical papers. Volume 50(2019)Supplement 1
• Page Start: 544
• Page End: 548
• Publication Date: 2019-10-04
• Subjects: image sticking -- leakage current -- multi N+ -- 4-mask technology; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13556
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : A new method of multi N+ and thicker N+ film were used to lower the leakage current of amorphous silicon TFT to improve the image sticking instead of normal single N+ layer in 4‐mask process. In this article, the improvement of the leakage current and the Vth shift by using the multi N+ and thicker N+ layer will be investigated.