P‐7.2: Study on I‐V characteristics of LTPS by C‐V Method. (4th October 2019)
- Record Type:
- Journal Article
- Title:
- P‐7.2: Study on I‐V characteristics of LTPS by C‐V Method. (4th October 2019)
- Main Title:
- P‐7.2: Study on I‐V characteristics of LTPS by C‐V Method
- Authors:
- Sun, Shuang
Zhang, Fangzhen
Niu, Yanan
Shi, Lubin
Niu, Jing
Peng, Jintao
Zhou, Tingting
Peng, Kuanjun - Abstract:
- Abstract : In this paper, we have studied the C‐V and I‐V characteristics of LTPS for knowing the quality of key thin film before the device was finished. The key thin film are the gate insulation and poly‐Si. The C‐V characteristics of these thin films can reflect the I‐V characteristics of final device and can reduce the poor device TFT characteristic caused by array process.
- Is Part Of:
- Digest of technical papers. Volume 50(2019)Supplement 1
- Journal:
- Digest of technical papers
- Issue:
- Volume 50(2019)Supplement 1
- Issue Display:
- Volume 50, Issue 1 (2019)
- Year:
- 2019
- Volume:
- 50
- Issue:
- 1
- Issue Sort Value:
- 2019-0050-0001-0000
- Page Start:
- 800
- Page End:
- 803
- Publication Date:
- 2019-10-04
- Subjects:
- Capacitance-Voltage -- Gate Insulator -- LTPS
Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/sdtp.13653 ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 14310.xml