Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure. (24th August 2020)

• Record Type: Journal Article
• Authors: Cai, Lichao; Xu, Bin; Lv, Meizhe; Jia, Feng; Yuan, Xingdong
• Other Names: Jiao Tifeng Guest Editor.
• Is Part Of: Journal of chemistry. Volume 2020(2020)
• Publication Date: 2020-08-24
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1155/2020/7853623
• Languages: English
• ISSNs: 2090-9063

Abstract

Abstract : Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.