P‐6.6: Effects of lightly Doped Drain Structure in n‐channel ELA Bridged‐Grain Poly‐Si TFTs. (4th October 2019)

• Record Type: Journal Article
• Authors: Guo, Jian; Yu, Zhinong; Yan, Wei; Shi, Dawei; Xue, Jianshe; Xue, Wei
• Is Part Of: Digest of technical papers. Volume 50(2019)Supplement 1
• Page Start: 766
• Page End: 770
• Publication Date: 2019-10-04
• Subjects: low-temperature polycrystalline silicon thin film -- transistors (LTPS-TFTs) -- bridged-grain (BG) -- lightly doped drain (LDD) -- reliability -- hot-carrier effect (HC effect); Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.13642
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We lead the lightly doped drain (LDD) structure into the bridged‐grain (BG) poly‐Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion /Ioff current ratio 3.79×10 8 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2 /poly‐Si interface and the grain boundaries of poly‐Si near the surface conduction channel, resulting in the stable on‐state drive current (Ion ) and drain saturation voltage (Vdsat ). All test results indicate that the BG poly‐Si TFT with a LDD structure will work well and has a great potential for system‐on‐panel application.