15.1: Invited Paper: Effect of Cu Barrier Source/Drain Electrode on the Back‐Channel‐Etched High Mobility Oxide Thin‐Film Transistors. (4th October 2019)

Record Type:
Journal Article
Title:
15.1: Invited Paper: Effect of Cu Barrier Source/Drain Electrode on the Back‐Channel‐Etched High Mobility Oxide Thin‐Film Transistors. (4th October 2019)
Main Title:
15.1: Invited Paper: Effect of Cu Barrier Source/Drain Electrode on the Back‐Channel‐Etched High Mobility Oxide Thin‐Film Transistors
Authors:
Park, Sang-Hee Ko
Kim, Daeho
Jeong, Wooseok
Lee, Seung-Hee
Winkler, Jörg
Schmidt, Hennrik
Abstract:
Abstract : We investigated effect of Cu barrier materials on the back channel etched (BCE) oxide thin film transistor (TFT). When using Cu etchant, MoAl and Mo‐Al‐Ti show better etch selectivity for Al:ITZO layer than Mo‐Ti. The BCE TFTs with Cu barrier source/drain layers show good S.S. and Von characteristics with mobility higher than 35 cm 2 /V.s.
Is Part Of:
Digest of technical papers. Volume 50(2019)Supplement 1
Journal:
Digest of technical papers
Issue:
Volume 50(2019)Supplement 1
Issue Display:
Volume 50, Issue 1 (2019)
Year:
2019
Volume:
50
Issue:
1
Issue Sort Value:
2019-0050-0001-0000
Page Start:
150
Page End:
151
Publication Date:
2019-10-04
Subjects:
Oxide TFT -- Cu barrier source/drain electrode -- Back-channel etch
Information display systems -- Congresses
621.3815422
Journal URLs:
http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗
DOI:
10.1002/sdtp.13418 ↗
Languages:
English
ISSNs:
0097-966X
Deposit Type:
Legaldeposit
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:
British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store
Ingest File:
14278.xml