Cite
HARVARD Citation
Tao, Q. et al. (2018). Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer. Materials science in semiconductor processing. pp. 167-170. [Online].
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Tao, Q. et al. (2018). Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer. Materials science in semiconductor processing. pp. 167-170. [Online].