Cite
HARVARD Citation
Irikura, K. et al. (2018). Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth. Materials science in semiconductor processing. pp. 13-18. [Online].
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Irikura, K. et al. (2018). Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth. Materials science in semiconductor processing. pp. 13-18. [Online].