Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment. Issue 7 (16th June 2017)

• Record Type: Journal Article
• Authors: Stübner, Ronald; Kolkovsky, Vladimir; Weber, Jörg; Abrosimov, Nikolay V.
• Is Part Of: Physica status solidi. Volume 214:Issue 7(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-06-16
• Subjects: carbon -- deep level transient spectroscopy -- defects -- hydrogen -- plasma treatment -- SiGe; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700329
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In the present study, the electrical and structural properties of two carbon‐hydrogen related DLTS levels (E42 and E262) that appear after hydrogen plasma treatment are investigated in diluted Si1− x Ge x alloys. E42 and E262 were previously observed in pure Si after hydrogenation by a dc hydrogen plasma. They were correlated with different charge states of a carbon–hydrogen complex, where H is located on the anti‐bonding position at the carbon atom (CH1AB ). By utilizing the Laplace DLTS technique we show that the DLTS peaks E42 and E262 consist of several components in Si1− x Ge x . These components can be quantitatively explained by the presence of Ge atoms in the first and second nearest‐neighborhood of the CH1AB complex. The observed Laplace DLTS spectra indicate a preference of hydrogen to bond to carbon with a Ge atom in its first nearest‐neighborhood.