Localized Defects on Copper Sulfide Surface for Enhanced Plasmon Resonance and Water Splitting. Issue 36 (19th July 2017) - Ren, Kaixv
Abstract : Surficial defects in semiconductor can induce high density of carriers and cause localized surface plasmon resonance which is prone to light harvesting and energy conversion, while internal defects may cause serious recombination of electrons and holes. Thus, it is significant to precisely control the distribution of defects, although there are few successful examples. Herein, an effective strategy to confine abundant defects within the surface layer of Cu1.94 S nanoflake arrays (NFAs) is reported, leaving a perfect internal structure. The Cu1.94 S NFAs are then applied in photoelectrochemical (PEC) water splitting. As expected, the surficial defects give rise to strong LSPR effect and quick charge separation near the surface; meanwhile, they provide active sites for catalyzing hydrogen evolution. As a result, the NFAs achieve the top PEC properties ever reported for Cu x S‐based photocathodes. Abstract : Cu x S nanoflake arrays (NFAs) with abundant surficial defects and a perfect internal structure are applied in photoelectrochemical (PEC) water splitting; the surficial defects give rise to a strong localized surface plasmon resonance effect and quick charge separation near the surface. They also provide active sites for catalyzing hydrogen evolution. As a result, the NFAs achieve the top PEC properties ever reported for Cu x S‐based photocathodes.