Experimental evidence of electron capture and emission from trap levels in Cz silicon. Issue 7 (1st June 2017)

• Record Type: Journal Article
• Authors: Heinz, Friedemann D.; Niewelt, Tim; Schubert, Martin C.
• Is Part Of: Physica status solidi. Volume 214:Issue 7(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-06-01
• Subjects: electron capture -- electron traps -- electronic structure -- photoluminescence -- silicon; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700292
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Up to now the existence of trap levels − defect levels in the forbidden band gap which temporary trap minority charge carriers − in Cz silicon was controversially discussed. We directly monitor the transient dynamics of the free electron density in the conduction band by the means of a time correlated single photon counting of photoluminescence. A variation of the experimental conditions reveals both a decrease of the electron density on a timescale of microseconds, which is not governed by recombination and an apparent generation of electrons on a scale of up to multiple seconds. We discuss that the transient dynamics may be excellently described by trap levels, providing strong evidence for their existence.