Directional Charge Transport in Layered Two‐Dimensional Triazine‐Based Graphitic Carbon Nitride. (5th June 2019)

• Record Type: Journal Article
• Authors: Noda, Yu; Merschjann, Christoph; Tarábek, Ján; Amsalem, Patrick; Koch, Norbert; Bojdys, Michael J.
• Is Part Of: Angewandte Chemie. Volume 131:Number 28(2019)
• Page Start: 9494
• Page End: 9498
• Publication Date: 2019-06-05
• Subjects: 2D-Materialien -- Dünnschichten -- Halbleiter -- Kohlenstoffnitrid -- Schichtartige Verbindungen; Chemistry -- Periodicals; 540
• DOI: 10.1002/ange.201902314
• Languages: English
• ISSNs: 0044-8249

Abstract

Abstract: Triazine‐based graphitic carbon nitride (TGCN) is the most recent addition to the family of graphene‐type, two‐dimensional, and metal‐free materials. Although hailed as a promising low‐band‐gap semiconductor for electronic applications, so far, only its structure and optical properties have been known. Here, we combine direction‐dependent electrical measurements and time‐resolved optical spectroscopy to determine the macroscopic conductivity and microscopic charge‐carrier mobilities in this layered material "beyond graphene". Electrical conductivity along the basal plane of TGCN is 65 times lower than through the stacked layers, as opposed to graphite. Furthermore, we develop a model for this charge‐transport behavior based on observed carrier dynamics and random‐walk simulations. Our combined methods provide a path towards intrinsic charge transport in a direction‐dependent layered semiconductor for applications in field‐effect transistors (FETs) and sensors. Abstract : Schichtarbeit : Triazin‐basiertes Kohlenstoffnitrid, ein neues Mitglied der Graphen‐Familie metallfreier 2D‐Materialien, wächst in Form makroskopischer Dünnschichten auf einem Glassubstrat. In dem organischen Halbleiter mit kleiner Bandlücke findet elektrische Leitung im Gegensatz zu anderen 2D‐Materialien bevorzugt „out of plane" statt. Der Hopping‐Mechanismus zwischen den Schichten wird durch TA‐Spektroskopie und Berechnungen unterstützt.