Improvement of organic field-effect transistor characteristics via oxidation treatment of Ag nano-ink electrode surfaces. (28th November 2019)

• Record Type: Journal Article
• Authors: Minagawa, Masahiro; Kobayashi, Kanta; Sone, Shinnosuke; Shinbo, Kazunari
• Is Part Of: Japanese journal of applied physics. Volume 59:Number SC(2020)
• Publication Date: 2019-11-28
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab48cb
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Organic field-effect transistors (OFETs) containing surface oxidized Ag nano-ink electrodes were fabricated in order to investigate their electrical properties. OFETs having gate electrode/n-type Si wafer/SiO2 treated with octadecyltrichlorosilane/Ag nano-ink source–drain electrodes/deposited 9, 10-diphenylanthracene (DPA) layer stacked structures were fabricated. The silver nano-ink electrodes were oxidized by exposure to ultraviolet light (184.9 and 253.7 nm) before DPA-layer deposition. The OFETs having unoxidized electrodes failed to operate, while the drain currents of the OFETs with oxidized electrodes increased with oxidation time. The largest drain current (−269 μ A) was obtained for the OFET with an electrode oxidation time of 600 s, which resulted in a reduction in the contact resistance to 9.5 kΩ cm despite the large ionization potential of the DPA layer (∼5.8 eV). The observed behavior is attributed to the oxidized Ag electrodes enhancing hole injection by oxidizing the surface of the DPA layer.