Contact engineering high-performance ambipolar multilayer tellurium transistors. (23rd December 2019)

• Record Type: Journal Article
• Authors: Qin, Fanglu; Hu, Yunxia; Hu, PingAn; Feng, Wei
• Is Part Of: Nanotechnology. Volume 31:Number 11(2020)
• Publication Date: 2019-12-23
• Subjects: contact engineering -- multilayer Te nanosheets -- transistor -- ambipolar; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab5bec
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Multilayer Te nanosheets have attracted increasing attention due to their high-performance electronic transport properties and good air-stability. Theoretical simulation suggests that the electronic properties of multilayer Te nanosheets could be effectively modulated by contact engineering, but most studies have reported p-type multilayer Te devices. Here, for the first time, we report on high performance ambipolar multilayer Te filed-effect-transistors (FETs) with low work function scandium (Sc, 3.58 eV), demonstrating high mobilities of 489 and 648 cm 2 V −1 s −1 for electron and hole transport, respectively. Multilayer Te FETs with large work function metals, such as chromium (Cr, 4.5 eV), show a typical p-type transport behavior. The band structure of multilayer Te with a small bandgap and low work function Sc result in a small contact resistance ( R c ) for both of electron and hole transport, which leads to the ambipolar behavior of multilayer Te nanosheets. The ambipolar behavior of multilayer Te FETs indicates that contact engineering is a valid tool to tune the electrical properties of multilayer Te and raises the possibility of designing digital circuits based on multilayer Te.